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| Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT54 (TO92) envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFE tfi PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Fall time (Inductive) CONDITIONS VBE = 0 V TYP. 0.27 12 56 MAX. 700 700 350 1.0 2.0 2.0 1.0 19 76 UNIT V V V A A W V ns Tlead 25 C IC = 1.0 A;IB = 0.2 A IC = 1.0 A; VCE = 5 V IC = 1.0 A; IB1= 0.2 A PINNING - SOT54 (TO92) PIN 1 2 3 Base Collector Emitter DESCRIPTION PIN CONFIGURATION SYMBOL c b e 321 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 700 350 700 1.0 2.0 0.5 1.0 2.0 150 150 UNIT V V V A A A A W C C Tmb 25 C THERMAL RESISTANCES SYMBOL Rth j-lead Rth j-a PARAMETER Thermal resistance junction to lead Thermal resistance junction to ambient pcb mounted; lead length = 4 mm CONDITIONS TYP. 150 MAX. 60 UNIT K/W K/W May 2001 1 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100B STATIC CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL ICES,ICBO ICES ICEO IEBO VCEOsust VCEsat VBEsat hFE hFE hFE PARAMETER Collector cut-off current 1 CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VCEO = VCEOMmax (350V) VEB = 9 V; IC = 0 A IB = 0 A; IC = 10 mA; L = 25 mH IC = 1 A; IB = 0.2 A IC = 1 A; IB = 0.2 A IC = 1mA; VCE = 5 V IC = 100mA; VCE = 5 V IC = 1.0 A; VCE = 5 V MIN. 350 17 19 9 TYP. 0.8 2.0 0.05 0.27 1.03 23 30 12 MAX. 100 500 100 100 1.0 1.3 46 19 UNIT A A A A V V V Collector cut-off current 1 Emitter cut-off current Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DYNAMIC CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL PARAMETER Switching times (resistive load) ton ts tf Turn-on time Turn-off storage time Turn-off fall time Switching times (inductive load) tsi tfi Turn-off storage time Turn-off fall time Switching times (inductive load) tsi tfi Turn-off storage time Turn-off fall time CONDITIONS ICon = 1.0 A; IBon = -IBoff = 0.2 A; RL = 75 ohms; VBB2 = 4V; TYP. MAX. UNIT s s s s ns s ns 1.0 1.95 0.22 1.28 2.61 0.30 ICon = 1.0 A; IBon = 0.2 A; LB = 1 H; -VBB = 5 V ICon = 1.0 A; IBon = 0.2 A; LB = 1 H; -VBB = 5 V; Tj = 100 C 0.55 56 0.74 76 - 1.5 140 1 Measured with half sine-wave voltage (curve tracer). May 2001 2 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100B + 50v 100-200R ! 100 Zth / (K/W) 0.5 10 0.2 0.1 0.05 0.02 P D 0.1 D=0 0.01 1u 10u 100u 1m 10m 100m t/s 1 10 100 tp tp Horizontal Oscilloscope Vertical 300R 30-60 Hz 6V 1R 1 D= T t T Fig.1. Test circuit for VCEOsust. Fig.4. Transient thermal impedance. Zth j-lead = f(t); parameter D = tp/T HFE 50 IC / mA 25 C 125 C 30 20 -40 C 15 250 10 VCE = 1V 100 5 10 0 VCE / V min VCEOsust 2 Fig.2. Oscilloscope display for VCEOsust. 0.01 0.05 0.1 IC/A 0.5 1 2 3 Fig.5. Typical DC current gain. hFE = f(IC) parameter VCE PD% Normalised Power Derating HFE 50 120 110 100 90 80 70 60 50 125 C 25 C 30 20 -40 C 15 10 VCE = 5V 5 40 30 20 10 0 0 20 40 60 80 100 Tmb / C 120 140 0.01 0.05 0.1 IC/A 0.5 1 2 3 2 Fig.3. Normalised power dissipation. PD% = 100PD/PD 25C = f (Tmb) Fig.6. Typical DC current gain. hFE = f(IC) parameter VCE May 2001 3 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100B VCEsat/V VBEsat/V 1.3 1.2 1.2 1 1.1 0.8 1 0.6 0.9 0.4 0.8 0.2 0.7 0 0.01 0.02 0.05 0.1 IC/A 0.2 0.5 1 2 0.6 0.01 0.02 0.05 0.1 IC/A 0.2 0.5 1 2 Fig.7. Collector-Emitter saturation voltage. Solid Lines = typ values, IC/IB = 3 Fig.8. Base-Emitter saturation voltage. Solid Lines = typ values, IC/IB = 3 INDUCTIVE SWITCHING VCC ICon 90 % IC LC 10 % IBon ts tf t LB T.U.T. IB toff IBon -VBB t -IBoff Fig.9. Test circuit inductive load. VCC = 300 V; -VBE = 5 V, LC = 200 H; LB = 1 H tfi /ns 200 Fig.10. Switching times waveforms with inductive load. tfi /ns 250 IC = 1.5A 150 200 IC/IB = 10 150 100 IC = 1A 100 IC/IB = 5 50 50 IC = 0.5A 0 2 3 4 5 6 7 HFE GAIN (IC/IB) 8 9 10 11 0 0.2 0.4 0.6 0.8 1 1.2 IC/A 1.4 1.6 1.8 2 2.2 Fig.11. Inductive switching. tfi = f(hFE) Fig.12. Inductive switching. tfi = f(IC) May 2001 4 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100B tsi /us 1 tsi /us 1 IC/IB = 3 0.8 IC = 1.5A 0.8 IC/IB = 5 0.6 0.6 IC = 1A 0.4 0.4 IC/IB = 10 IC = 0.5A 0.2 0.2 0 2 3 4 5 6 7 HFE GAIN (IC/IB) 8 9 10 11 0 0.2 0.4 0.6 0.8 1 1.2 IC/A 1.4 1.6 1.8 2 2.2 Fig.13. Inductive switching. tsi = f(hFE) Fig.14. Inductive switching. tsi = f(IC) RESISTIVE SWITCHING VCC 90 % ICon 90 % IC RL VIM 0 tp T ts 10 % ton tf IBon 10 % tr 30ns -IBoff RB T.U.T. IB toff Fig.15. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 s; = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements. ton /us Fig.16. Switching times waveforms with resistive load. ts us 2.5 2 IC/IB = 10 IC/IB = 3 2 1.5 IC/IB = 5 1.5 IC/IB = 5 1 1 0.5 IC/IB = 3 0.5 IC/IB = 10 0 0.2 0.4 0.6 0.8 1 1.2 IC/A 1.4 1.6 1.8 2 2.2 0 0.2 0.4 0.6 0.8 1 1.2 IC/A 1.4 1.6 1.8 2 2.2 Fig.17. Resistive switching. ton = f(IC) Fig.18. Resistive switching. ts = f(IC) May 2001 5 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100B tf /ns 5,000 2,000 IC/IB = 3 1,000 IC/IB = 5 500 200 IC/IB = 10 100 50 0.2 0.4 0.6 0.8 1 1.2 IC /A 1.4 1.6 1.8 2 2.2 Fig.19. Resistive switching. tf = f(IC) VCC IC/A 2.5 2.25 2 1.75 LC VCL(RBSOAR) IBon PROBE POINT LB T.U.T. 1.5 1.25 1 0.75 0.5 -9V -5V -3V -1V -VBB 0.25 0 0 100 200 300 400 500 600 700 800 VCEclamp/V Fig.20. Test Circuit for the RBSOA test. Vcl 700V; Vcc = 150V; LB = 1H; Lc = 200H Fig.21. Reverse bias safe operating area Tj Tjmax for -VBE = 9V, 5V,3V & 1V May 2001 6 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100B MECHANICAL DATA Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Fig.22. TO92 ; plastic envelope; Net Mass: 0.2 g Notes 1. Epoxy meets UL94 V0 at 1/8". May 2001 7 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100B DEFINITIONS DATA SHEET STATUS DATA SHEET STATUS2 Objective data PRODUCT STATUS3 Development DEFINITIONS This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in ordere to improve the design and supply the best possible product This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A Preliminary data Qualification Product data Production Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 2 Please consult the most recently issued datasheet before initiating or completing a design. 3 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. May 2001 8 Rev 1.000 |
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